@misc{indiciae3af4680a8b13,
  title = {Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction},
  author = {N. Hrauda and J. J. Zhang and E. Wintersberger and T. Etzelstorfer and J. Stangl and D. Carbone and C. Biasotto and V. Jovanovic and L. K. Nanver and J. Moers and D. Grützmacher and G. Bauer},
  year = {2010},
  url = {https://arxiv.org/abs/1011.3978},
  note = {Source identifier: 1011.3978}
}