@misc{indiciaed5112d5ec488,
  title = {Graphene field-effect transistors based on boron nitride gate dielectrics},
  author = {I. Meric and C. R. Dean and A. F. Young and J. Hone and P. Kim and K. L. Shepard},
  year = {2011},
  doi = {10.1109/iedm.2010.5703419},
  url = {https://arxiv.org/abs/1101.4712},
  note = {Source identifier: 1101.4712}
}