@misc{indiciae8cf987ce675e,
  title = {High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy},
  author = {MVS Chandrashekhar and Iftekhar Chowdhury and P. Kaminski and R. Kozlowski and P. B. Klein and Tangali Sudarshan},
  year = {2011},
  doi = {10.1143/apex.5.025502},
  url = {https://arxiv.org/abs/1104.4509},
  note = {Source identifier: 1104.4509}
}