@misc{indiciae44084d7a35b1,
  title = {Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks},
  author = {M. Shahinur Rahman and E . K. Evangelou},
  year = {2011},
  doi = {10.1109/ted.2011.2162095},
  url = {https://arxiv.org/abs/1107.4874},
  note = {Source identifier: 1107.4874}
}