TY  - RPRT
TI  - Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks
AU  - M. Shahinur Rahman
AU  - E . K. Evangelou
PY  - 2011
DO  - 10.1109/ted.2011.2162095
UR  - https://arxiv.org/abs/1107.4874
ID  - 1107.4874
ER  -