@misc{indiciaea0e97f1b5623,
  title = {Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon},
  author = {Jiaguo Zhang and Ioana Pintilie and Eckhart Fretwurst and Robert Klanner and Hanno Perrey and Joern Schwandt},
  year = {2012},
  url = {https://arxiv.org/abs/1107.5949},
  note = {Source identifier: 1107.5949}
}