TY  - RPRT
TI  - Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon
AU  - Jiaguo Zhang
AU  - Ioana Pintilie
AU  - Eckhart Fretwurst
AU  - Robert Klanner
AU  - Hanno Perrey
AU  - Joern Schwandt
PY  - 2012
UR  - https://arxiv.org/abs/1107.5949
ID  - 1107.5949
ER  -