@misc{indiciaef67e2e89c297,
  title = {Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation},
  author = {Jing Li and Ian Appelbaum},
  year = {2011},
  doi = {10.1103/physrevb.84.165318},
  url = {https://arxiv.org/abs/1108.2504},
  note = {Source identifier: 1108.2504}
}