TY  - RPRT
TI  - Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
AU  - Jing Li
AU  - Ian Appelbaum
PY  - 2011
DO  - 10.1103/physrevb.84.165318
UR  - https://arxiv.org/abs/1108.2504
ID  - 1108.2504
ER  -