@misc{indiciae7706b72456d0,
  title = {Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates},
  author = {O. I. Velichko and A. P. Kavaliova},
  year = {2011},
  doi = {10.1016/j.physb.2012.02.036},
  url = {https://arxiv.org/abs/1108.4154},
  note = {Source identifier: 1108.4154}
}