TY  - RPRT
TI  - Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates
AU  - O. I. Velichko
AU  - A. P. Kavaliova
PY  - 2011
DO  - 10.1016/j.physb.2012.02.036
UR  - https://arxiv.org/abs/1108.4154
ID  - 1108.4154
ER  -