@misc{indiciae96105baa8779,
  title = {Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation},
  author = {Nicolas Reckinger and Claude Poleunis and Emmanuel Dubois and Constantin Augustin Dutu and Xiaohui Tang and Arnaud Delcorte and Jean-Pierre Raskin},
  year = {2011},
  doi = {10.1063/1.3608159},
  url = {https://arxiv.org/abs/1110.5461},
  note = {Source identifier: 1110.5461}
}