@misc{indiciaeb6f2423ff6a8,
  title = {Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations},
  author = {Susan Meñez Aspera and Hideaki Kasai and Hirofumi Kishi and Nobuyoshi Awaya and Shigeo Ohnishi and Yukio Tamai},
  year = {2011},
  url = {https://arxiv.org/abs/1112.2500},
  note = {Source identifier: 1112.2500}
}