TY  - RPRT
TI  - Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations
AU  - Susan Meñez Aspera
AU  - Hideaki Kasai
AU  - Hirofumi Kishi
AU  - Nobuyoshi Awaya
AU  - Shigeo Ohnishi
AU  - Yukio Tamai
PY  - 2011
UR  - https://arxiv.org/abs/1112.2500
ID  - 1112.2500
ER  -