@misc{indiciae4db8df18d101,
  title = {High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces},
  author = {Binhui Hu and Tomasz M. Kott and Robert N. McFarland and B. E. Kane},
  year = {2012},
  doi = {10.1063/1.4729584},
  url = {https://arxiv.org/abs/1201.3662},
  note = {Source identifier: 1201.3662}
}