TY  - RPRT
TI  - High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
AU  - Binhui Hu
AU  - Tomasz M. Kott
AU  - Robert N. McFarland
AU  - B. E. Kane
PY  - 2012
DO  - 10.1063/1.4729584
UR  - https://arxiv.org/abs/1201.3662
ID  - 1201.3662
ER  -