@misc{indiciaed6b6fcabff6d,
  title = {Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices},
  author = {B. C. Chapler and S. Mack and L. Ju and T. W. Elson and B. W. Boudouris and E. Namdas and J. D. Yuen and A. J. Heeger and N. Samarth and M. Di Ventra and R. A. Segalman and D. D. Awschalom and F. Wang and D. N. Basov},
  year = {2012},
  doi = {10.1103/physrevb.86.165302},
  url = {https://arxiv.org/abs/1207.0895},
  note = {Source identifier: 1207.0895}
}