@misc{indiciaee6e02631f3e4,
  title = {The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures},
  author = {A. M. Burke and D. Waddington and D. Carrad and R. Lyttleton and H. H. Tan and P. J. Reece and O. Klochan and A. R. Hamilton and A. Rai and D. Reuter and A. D. Wieck and A. P. Micolich},
  year = {2012},
  doi = {10.1103/physrevb.86.165309},
  url = {https://arxiv.org/abs/1207.2851},
  note = {Source identifier: 1207.2851}
}