@misc{indiciaef316aca1de73,
  title = {Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach},
  author = {Malgorzata Wierzbowska},
  year = {2012},
  doi = {10.1063/1.47340000},
  url = {https://arxiv.org/abs/1207.3061},
  note = {Source identifier: 1207.3061}
}