@misc{indiciae63f69a709010,
  title = {A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases},
  author = {Tawhid Rana and MVS Chandrashekhar and Haizheng Song and Tangali S. Sudarshan},
  year = {2013},
  url = {https://arxiv.org/abs/1208.6018},
  note = {Source identifier: 1208.6018}
}