TY  - RPRT
TI  - A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
AU  - Tawhid Rana
AU  - MVS Chandrashekhar
AU  - Haizheng Song
AU  - Tangali S. Sudarshan
PY  - 2013
UR  - https://arxiv.org/abs/1208.6018
ID  - 1208.6018
ER  -