@misc{indiciaefbb29855b8de,
  title = {Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties},
  author = {P. Klenovský and V. Křápek and D. Munzar and J. Humlíček},
  year = {2012},
  doi = {10.1063/1.3517446},
  url = {https://arxiv.org/abs/1209.6234},
  note = {Source identifier: 1209.6234}
}