@misc{indiciaec3907f058ddf,
  title = {The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices},
  author = {D. J. Carrad and A. M. Burke and P. J. Reece and R. W. Lyttleton and D. E. J. Waddington and A. Rai and D. Reuter and A. D. Wieck and A. P. Micolich},
  year = {2013},
  url = {https://arxiv.org/abs/1212.0930},
  note = {Source identifier: 1212.0930}
}