@misc{indiciae1f6e3c6d8d25,
  title = {Characterization of InSb quantum wells with atomic layer deposited gate dielectrics},
  author = {M. M. Uddin and H. W. Liu and K. F. Yang and K. Nagase and T. D. Mishima and M. B. Santos and Y. Hirayama},
  year = {2012},
  doi = {10.1063/1.4769225},
  url = {https://arxiv.org/abs/1212.1242},
  note = {Source identifier: 1212.1242}
}