@misc{indiciae6e262867cf4e,
  title = {20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec},
  author = {J. J. Gu and X. W. Wang and H. Wu and J. Shao and A. T. Neal and M. J. Manfra and R. G. Gordon and P. D. Ye},
  year = {2012},
  url = {https://arxiv.org/abs/1212.4227},
  note = {Source identifier: 1212.4227}
}