@misc{indiciaed57e08af411e,
  title = {High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects},
  author = {Wenzhong Bao and Xinghan Cai and Dohun Kim and Karthik Sridhara and Michael S. Fuhrer},
  year = {2012},
  doi = {10.1063/1.4789365},
  url = {https://arxiv.org/abs/1212.6292},
  note = {Source identifier: 1212.6292}
}