@misc{indiciaec9a2d075e62b,
  title = {Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors},
  author = {Thomas Poehlsen and Julian Becker and Eckhart Fretwurst and Robert Klanner and Jörn Schwandt and Jiaguo Zhang},
  year = {2013},
  doi = {10.1016/j.nima.2013.04.026},
  url = {https://arxiv.org/abs/1302.6077},
  note = {Source identifier: 1302.6077}
}