TY  - RPRT
TI  - Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
AU  - Thomas Poehlsen
AU  - Julian Becker
AU  - Eckhart Fretwurst
AU  - Robert Klanner
AU  - Jörn Schwandt
AU  - Jiaguo Zhang
PY  - 2013
DO  - 10.1016/j.nima.2013.04.026
UR  - https://arxiv.org/abs/1302.6077
ID  - 1302.6077
ER  -