@misc{indiciae71b3b3c92dcc,
  title = {Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors},
  author = {Thomas Poehlsen and Eckhart Fretwurst and Robert Klanner and Joern Schwandt and Jiaguo Zhang},
  year = {2013},
  doi = {10.1016/j.nima.2013.03.035},
  url = {https://arxiv.org/abs/1305.0398},
  note = {Source identifier: 1305.0398}
}