@misc{indiciaeafd5e2af85f2,
  title = {Transport properties of p-type metal-oxide-semiconductor inversion layer in (110) and (111) silicon channel under uniaxial stress},
  author = {Jun Wei Fan},
  year = {2013},
  url = {https://arxiv.org/abs/1305.7037},
  note = {Source identifier: 1305.7037}
}