@misc{indiciae1ccd688839ac,
  title = {Electronic Properties of MoS2/HfO2 Interface: Impact of Interfacial Impurities during Atomic Layer Deposition Growth},
  author = {Santosh KC and Roberto C. Longo and Robert M. Wallace and Kyeongjae Cho},
  year = {2014},
  url = {https://arxiv.org/abs/1402.0457},
  note = {Source identifier: 1402.0457}
}