TY  - RPRT
TI  - Electronic Properties of MoS2/HfO2 Interface: Impact of Interfacial Impurities during Atomic Layer Deposition Growth
AU  - Santosh KC
AU  - Roberto C. Longo
AU  - Robert M. Wallace
AU  - Kyeongjae Cho
PY  - 2014
UR  - https://arxiv.org/abs/1402.0457
ID  - 1402.0457
ER  -