@misc{indiciaee87454e4e593,
  title = {High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts},
  author = {Hsun-Jen Chuang and Xuebin Tan and Nirmal Jeevi Ghimire and Meeghage Madusanka Perera and Bhim Chamlagain and Mark Ming-Cheng Cheng and Jiaqiang Yan and David Mandrus and David Tománek and Zhixian Zhou},
  year = {2014},
  doi = {10.1021/nl501275p},
  url = {https://arxiv.org/abs/1405.5437},
  note = {Source identifier: 1405.5437}
}