@misc{indiciaef4f53e648294,
  title = {High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)},
  author = {Lingming Yang and Kausik Majumdar and Yuchen Du and Han Liu and Heng Wu and Michael Hatzistergos and Py Hung and Robert Tieckelmann and Wilman Tsai and Chris Hobbs and Peide D. Ye},
  year = {2014},
  url = {https://arxiv.org/abs/1406.4492},
  note = {Source identifier: 1406.4492}
}