@misc{indiciaed7f0aad151b4,
  title = {Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate},
  author = {Hee Sung Lee and Seung Su Baik and Sung-Wook Min and Pyo Jin Jeon and Jin Sung Kim and Kyujin Choi and Sunmin Ryu and Hyoung Joon Choi and Jae Hoon Kim and Seongil Im},
  year = {2014},
  url = {https://arxiv.org/abs/1406.6779},
  note = {Source identifier: 1406.6779}
}