@misc{indiciae42f537bd7e61,
  title = {Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition},
  author = {Kassem Alassaad and Véronique Soulière and François Cauwet and Hervé Peyre and Davy Carole and Pawel Kwasnicki and Sandrine Juillaguet and Thomas Kups and Jörg Pezoldt and Gabriel Ferro},
  year = {2014},
  url = {https://arxiv.org/abs/1407.3222},
  note = {Source identifier: 1407.3222}
}