@misc{indiciae3d185fd77e0a,
  title = {Tunable charge-trap memory based on few-layer MoS2},
  author = {Enze Zhang and Weiyi Wang and Cheng Zhang and Yibo Jin and Guodong Zhu and Qingqing Sun and David Wei Zhan and Peng Zhou and Faxian Xiu},
  year = {2014},
  url = {https://arxiv.org/abs/1407.7432},
  note = {Source identifier: 1407.7432}
}