@misc{indiciaef373726f67ba,
  title = {High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics},
  author = {S. Valdueza-Felip and E. Bellet-Amalric and A. Núñez-Cascajero and Y. Wang and M. -P. Chauvat and P. Ruterana and S. Pouget and K. Lorenz and E. Alves and E. Monroy},
  year = {2015},
  doi = {10.1063/1.4903944},
  url = {https://arxiv.org/abs/1410.5659},
  note = {Source identifier: 1410.5659}
}