@misc{indiciaeacb0dd6ce562,
  title = {The formation of the positive, fixed charge at c-Si(111)/a-Si\$\_3\$N\$\_\{3.5\}\$:H interfaces},
  author = {L. E. Hintzsche and C. M. Fang and M. Marsman and M. W. P. E. Lamers and A. W. Weeber and G. Kresse},
  year = {2015},
  doi = {10.1103/physrevapplied.3.064005},
  url = {https://arxiv.org/abs/1501.03674},
  note = {Source identifier: 1501.03674}
}