@misc{indiciaef4f0237d6873,
  title = {Electronic transitions of jet-cooled SiC2, Si2Cn (n=1-3), Si3Cn (n=1,2), and SiC6H4 between 250 and 710 nm},
  author = {Mathias Steglich and John P. Maier},
  year = {2015},
  doi = {10.1088/0004-637x/801/2/119},
  url = {https://arxiv.org/abs/1503.05138},
  note = {Source identifier: 1503.05138}
}