TY  - RPRT
TI  - Electronic transitions of jet-cooled SiC2, Si2Cn (n=1-3), Si3Cn (n=1,2), and SiC6H4 between 250 and 710 nm
AU  - Mathias Steglich
AU  - John P. Maier
PY  - 2015
DO  - 10.1088/0004-637x/801/2/119
UR  - https://arxiv.org/abs/1503.05138
ID  - 1503.05138
ER  -