TY  - RPRT
TI  - Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3$\times$3)-3C-SiC($\bar{\text{1}}\bar{\text{1}}\bar{\text{1}}$) reconstruction
AU  - Lydia Nemec
AU  - Florian Lazarevic
AU  - Patrick Rinke
AU  - Matthias Scheffler
AU  - Volker Blum
PY  - 2015
DO  - 10.1103/physrevb.91.161408
UR  - https://arxiv.org/abs/1503.08588
ID  - 1503.08588
ER  -