@misc{indiciae6eadaf0b6770,
  title = {High-Mobility Holes in Dual-Gated WSe\$\_2\$ Field-Effect Transistors},
  author = {Hema C. P. Movva and Amritesh Rai and Sangwoo Kang and Kyounghwan Kim and Babak Fallahazad and Takashi Taniguchi and Kenji Watanabe and Emanuel Tutuc and Sanjay K. Banerjee},
  year = {2015},
  doi = {10.1021/acsnano.5b04611},
  url = {https://arxiv.org/abs/1509.03896},
  note = {Source identifier: 1509.03896}
}