@misc{indiciae40e620770a88,
  title = {Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs},
  author = {N. Takahashi and K. Watanabe and T. Taniguchi and K. Nagashio},
  year = {2015},
  doi = {10.1088/0957-4484/26/17/175708},
  url = {https://arxiv.org/abs/1510.01928},
  note = {Source identifier: 1510.01928}
}