TY  - RPRT
TI  - Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs
AU  - N. Takahashi
AU  - K. Watanabe
AU  - T. Taniguchi
AU  - K. Nagashio
PY  - 2015
DO  - 10.1088/0957-4484/26/17/175708
UR  - https://arxiv.org/abs/1510.01928
ID  - 1510.01928
ER  -