@misc{indiciae04b50ea8bbce,
  title = {Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics},
  author = {Renaud Puybaret and Gilles Patriarche and Matthew B. Jordan and Suresh Sundaram and Youssef El Gmili and Jean-Paul Salvestrini and Paul L. Voss and Walt A. de Heer and Claire Berger and Abdallah Ougazzaden},
  year = {2015},
  url = {https://arxiv.org/abs/1510.04513},
  note = {Source identifier: 1510.04513}
}