TY  - RPRT
TI  - Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
AU  - Renaud Puybaret
AU  - Gilles Patriarche
AU  - Matthew B. Jordan
AU  - Suresh Sundaram
AU  - Youssef El Gmili
AU  - Jean-Paul Salvestrini
AU  - Paul L. Voss
AU  - Walt A. de Heer
AU  - Claire Berger
AU  - Abdallah Ougazzaden
PY  - 2015
UR  - https://arxiv.org/abs/1510.04513
ID  - 1510.04513
ER  -