@misc{indiciaebaf996eaa620,
  title = {Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO\$\_3\$-SrTiO\$\_3\$-Based Heterostructures},
  author = {C. Woltmann and T. Harada and H. Boschker and V. Srot and P. A. van Aken and H. Klauk and J. Mannhart},
  year = {2015},
  doi = {10.1103/physrevapplied.4.064003},
  url = {https://arxiv.org/abs/1511.07680},
  note = {Source identifier: 1511.07680}
}