TY  - RPRT
TI  - Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures
AU  - C. Woltmann
AU  - T. Harada
AU  - H. Boschker
AU  - V. Srot
AU  - P. A. van Aken
AU  - H. Klauk
AU  - J. Mannhart
PY  - 2015
DO  - 10.1103/physrevapplied.4.064003
UR  - https://arxiv.org/abs/1511.07680
ID  - 1511.07680
ER  -