@misc{indiciae0d726452f4ed,
  title = {The effect of Ta oxygen scavenger layer on HfO\$\_2\$-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport},
  author = {X. Zhong and I. Rungger and P. Zapol and H. Nakamura and Y. Asai and O. Heinonen},
  year = {2016},
  doi = {10.1039/c6cp00450d},
  url = {https://arxiv.org/abs/1602.06793},
  note = {Source identifier: 1602.06793}
}